Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
dc.contributor.author | Alshehri, Abdullah H. | |
dc.contributor.author | Nelson-Fitzpatrick, Nathan | |
dc.contributor.author | Ibrahim, Khaled H. | |
dc.contributor.author | Mistry, Kissan | |
dc.contributor.author | Yavuz, Mustafa | |
dc.contributor.author | Musselman, Kevin P. | |
dc.date.accessioned | 2018-05-08T17:35:33Z | |
dc.date.available | 2018-05-08T17:35:33Z | |
dc.date.issued | 2018-03-21 | |
dc.description | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Alshehri, A. H., Nelson-Fitzpatrick, N., Ibrahim, K. H., Mistry, K., Yavuz, M., & Musselman, K. P. (2018). Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(3), 031602 and may be found at https://doi.org/10.1116/1.5019170 | en |
dc.description.abstract | In this work, a plasma assisted atomic layer deposition system was used to deposit nitrogen-doped titanium dioxide. A simple approach was developed that requires only a nitrogen plasma and short plasma exposure times to effectively dope TiO2. A range of nitrogen concentrations were achieved by varying the flow rate and exposure times of nitrogen and oxygen plasmas. A nitrogen content as high as 23 ± 0.5 at. % was observed when only the nitrogen plasma was used. It was also possible to vary the type of nitrogen doping from almost entirely interstitial to purely substitutional, as measured by x-ray photoelectron spectroscopy. Ultraviolet-visible spectroscopy measurements showed a shifting in the absorption edge from 350 to 520 nm with doping, indicating bandgap narrowing from 3.1 to 1.9 eV. | en |
dc.description.sponsorship | Canada Foundation for Innovation | en |
dc.description.sponsorship | Ontario Ministry of Research and Innovation, Industry, Canada | en |
dc.description.sponsorship | Mike and Ophelia Lazaradis | en |
dc.identifier.uri | http://dx.doi.org/10.1116/1.5019170 | |
dc.identifier.uri | http://hdl.handle.net/10012/13249 | |
dc.language.iso | en | en |
dc.publisher | AIP Publishing | en |
dc.subject | Spectroscopy | en |
dc.subject | Doping | en |
dc.subject | Optical properties | en |
dc.subject | X-ray photoelectron spectroscopy | en |
dc.subject | Optical absorption | en |
dc.subject | Band gap | en |
dc.subject | Atomic layer deposition | en |
dc.title | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 | en |
dc.type | Article | en |
dcterms.bibliographicCitation | Alshehri, A. H., Nelson-Fitzpatrick, N., Ibrahim, K. H., Mistry, K., Yavuz, M., & Musselman, K. P. (2018). Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(3), 031602. https://doi.org/10.1116/1.5019170 | en |
uws.contributor.affiliation1 | Facuty of Engineering | en |
uws.contributor.affiliation2 | Mechanical and Mechatronics Engineering | en |
uws.peerReviewStatus | Reviewed | en |
uws.scholarLevel | Faculty | en |
uws.typeOfResource | Text | en |