Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
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Date
2018-03-21
Authors
Alshehri, Abdullah H.
Nelson-Fitzpatrick, Nathan
Ibrahim, Khaled H.
Mistry, Kissan
Yavuz, Mustafa
Musselman, Kevin P.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
In this work, a plasma assisted atomic layer deposition system was used to deposit nitrogen-doped titanium dioxide. A simple approach was developed that requires only a nitrogen plasma and short plasma exposure times to effectively dope TiO2. A range of nitrogen concentrations were achieved by varying the flow rate and exposure times of nitrogen and oxygen plasmas. A nitrogen content as high as 23 ± 0.5 at. % was observed when only the nitrogen plasma was used. It was also possible to vary the type of nitrogen doping from almost entirely interstitial to purely substitutional, as measured by x-ray photoelectron spectroscopy. Ultraviolet-visible spectroscopy measurements showed a shifting in the absorption edge from 350 to 520 nm with doping, indicating bandgap narrowing from 3.1 to 1.9 eV.
Description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Alshehri, A. H., Nelson-Fitzpatrick, N., Ibrahim, K. H., Mistry, K., Yavuz, M., & Musselman, K. P. (2018). Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(3), 031602 and may be found at https://doi.org/10.1116/1.5019170
Keywords
Spectroscopy, Doping, Optical properties, X-ray photoelectron spectroscopy, Optical absorption, Band gap, Atomic layer deposition