Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
Abstract
In this work, a plasma assisted atomic layer deposition system was used to deposit nitrogen-doped titanium dioxide. A simple approach was developed that requires only a nitrogen plasma and short plasma exposure times to effectively dope TiO2. A range of nitrogen concentrations were achieved by varying the flow rate and exposure times of nitrogen and oxygen plasmas. A nitrogen content as high as 23 ± 0.5 at. % was observed when only the nitrogen plasma was used. It was also possible to vary the type of nitrogen doping from almost entirely interstitial to purely substitutional, as measured by x-ray photoelectron spectroscopy. Ultraviolet-visible spectroscopy measurements showed a shifting in the absorption edge from 350 to 520 nm with doping, indicating bandgap narrowing from 3.1 to 1.9 eV.
Cite this version of the work
Abdullah H. Alshehri, Nathan Nelson-Fitzpatrick, Khaled H. Ibrahim, Kissan Mistry, Mustafa Yavuz, Kevin P. Musselman
(2018).
Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. UWSpace.
http://hdl.handle.net/10012/13249
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