Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
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In this work, a plasma assisted atomic layer deposition system was used to deposit nitrogen-doped titanium dioxide. A simple approach was developed that requires only a nitrogen plasma and short plasma exposure times to effectively dope TiO2. A range of nitrogen concentrations were achieved by varying the flow rate and exposure times of nitrogen and oxygen plasmas. A nitrogen content as high as 23 ± 0.5 at. % was observed when only the nitrogen plasma was used. It was also possible to vary the type of nitrogen doping from almost entirely interstitial to purely substitutional, as measured by x-ray photoelectron spectroscopy. Ultraviolet-visible spectroscopy measurements showed a shifting in the absorption edge from 350 to 520 nm with doping, indicating bandgap narrowing from 3.1 to 1.9 eV.
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Abdullah H. Alshehri, Nathan Nelson-Fitzpatrick, Khaled H. Ibrahim, Kissan Mistry, Mustafa Yavuz, Kevin P. Musselman (2018). Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. UWSpace. http://hdl.handle.net/10012/13249