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Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

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dc.contributor.authorMistry, Kissan
dc.contributor.authorYavuz, Mustafa
dc.contributor.authorMusselman, Kevin P.
dc.date.accessioned2017-05-12T12:58:36Z
dc.date.available2017-05-12T12:58:36Z
dc.date.issued2017-04-27
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. and may be found at http://dx.doi.org/10.1063/1.4983256.en
dc.description.abstractMetal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.en
dc.identifier.urihttp://dx.doi.org/10.1063/1.4983256
dc.identifier.urihttp://hdl.handle.net/10012/11876
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesJournal of Applied Physics;121
dc.subjectMetal insulator metal diodeen
dc.subjectInsulatorsen
dc.subjectTunnelingen
dc.subjectElectron affinityen
dc.subjectWork functionen
dc.subjectSchottky barrieren
dc.subjectPoole frenkelen
dc.titleSimulated electron affinity tuning in metal-insulator-metal (MIM) diodesen
dc.typeArticleen
dcterms.bibliographicCitationMistry, K., Yavuz, M. & Musselman, K. P. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes. J. Appl. Phys. 121, 184504 (2017).en
uws.contributor.affiliation1Faculty of Engineeringen
uws.contributor.affiliation2Mechanical and Mechatronics Engineeringen
uws.contributor.affiliation2Waterloo Institute for Nanotechnology (WIN)en
uws.peerReviewStatusRevieweden
uws.scholarLevelFacultyen
uws.scholarLevelGraduateen
uws.typeOfResourceTexten

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