Research Update: Doping ZnO and TiO2 for solar cells
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Date
2013-12-01
Authors
Hoye, Robert L. Z.
Musselman, Kevin P.
MacManus-Driscoll, Judith L.
Advisor
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.
Description
© Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
Keywords
Atomic-Layer Deposition, Open-Circuit Voltage, Oxide Buffer Layer, Enhanced Photovoltaic Performance, Transparent Conducting Oxides, Doped Tio2, Zinc-Oxide, Thin-Films, Metal-Oxide, Electrodes