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Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

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dc.contributor.authorXiao, Ming
dc.contributor.authorMusselman, Kevin P.
dc.contributor.authorDuley, Walter W.
dc.contributor.authorZhou, Norman Y.
dc.date.accessioned2018-05-08T17:35:34Z
dc.date.available2018-05-08T17:35:34Z
dc.date.issued2017-04-01
dc.description.abstractThe resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10(4) s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.en
dc.description.sponsorshipNatural Sciences and Engineering Research Council (NSERC) of Canadaen
dc.description.sponsorshipState Scholarship Fund of China [201506160061]en
dc.identifier.urihttp://dx.doi.org/10.1007/s40820-016-0116-2
dc.identifier.urihttp://hdl.handle.net/10012/13251
dc.language.isoenen
dc.publisherSpringeren
dc.rightsAttribution 4.0 International*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subjectTiO2 nanowire networksen
dc.subjectResistive switching memoryen
dc.subjectTi foilen
dc.subjectHydrothermal processen
dc.subjectAl electrodeen
dc.titleResistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Methoden
dc.typeArticleen
dcterms.bibliographicCitationXiao, M., Musselman, K. P., Duley, W. W., & Zhou, N. Y. (2017). Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method. Nano-Micro Letters, 9(2). https://doi.org/10.1007/s40820-016-0116-2en
uws.contributor.affiliation1Facuty of Engineeringen
uws.contributor.affiliation2Mechanical and Mechatronics Engineeringen
uws.peerReviewStatusRevieweden
uws.scholarLevelFacultyen
uws.typeOfResourceTexten

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