Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE

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dc.contributor.authorShi, Y.
dc.contributor.authorBergeron, E.
dc.contributor.authorSfigakis, F.
dc.contributor.authorBaugh, J.
dc.contributor.authorWasilewski, Z.
dc.date.accessioned2019-12-23T18:49:43Z
dc.date.available2019-12-23T18:49:43Z
dc.date.issued2019-05-01
dc.descriptionThe final publication is available at Elsevier via https://doi.org/10.1016/j.jcrysgro.2019.02.039. © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.description.abstractComprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (0 0 1) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [ 1 0] direction was found to be around 0.5–0.6 with our growth conditions. On 2-inch GaAs (0 0 1) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs.en
dc.description.sponsorshipThe authors acknowledge the support from the Natural Sciences and Engineering Research Council (NSERC) of Canada, the Waterloo Institute of Nanotechnology (WIN) and the Institute of Quantum Computing (IQC).en
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2019.02.039
dc.identifier.urihttp://hdl.handle.net/10012/15380
dc.language.isoenen
dc.publisherElsevieren
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectsurface morphologyen
dc.subjectsubstrate offcuten
dc.subjectspiral growthen
dc.subjectInSb QWen
dc.subjectmetamorphic bufferen
dc.titleHillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBEen
dc.typeArticleen
dcterms.bibliographicCitationY. Shi, E. Bergeron, F. Sfigakis, J. Baugh, Z.R. Wasilewski, Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE, Journal of Crystal Growth (2019), doi: https://doi.org/10.1016/j.jcrysgro.2019.02.039en
uws.contributor.affiliation1Faculty of Engineeringen
uws.contributor.affiliation1Faculty of Scienceen
uws.contributor.affiliation2Chemistryen
uws.contributor.affiliation2Electrical and Computer Engineeringen
uws.contributor.affiliation2Institute of Quantum Computing (IQR)en
uws.contributor.affiliation2Physics and Astronomyen
uws.contributor.affiliation2Waterloo Institute for Nanotechnology (WIN)en
uws.peerReviewStatusRevieweden
uws.scholarLevelFacultyen
uws.scholarLevelGraduateen
uws.typeOfResourceTexten

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