Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE
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Date
2019-05-01
Authors
Shi, Y.
Bergeron, E.
Sfigakis, F.
Baugh, J.
Wasilewski, Z.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Comprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (0 0 1) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [ 1 0] direction was found to be around 0.5–0.6 with our growth conditions. On 2-inch GaAs (0 0 1) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs.
Description
The final publication is available at Elsevier via https://doi.org/10.1016/j.jcrysgro.2019.02.039. © 2019.
This manuscript version is made available under the CC-BY-NC-ND 4.0 license
http://creativecommons.org/licenses/by-nc-nd/4.0/
Keywords
surface morphology, substrate offcut, spiral growth, InSb QW, metamorphic buffer