Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE
| dc.contributor.author | Shi, Y. | |
| dc.contributor.author | Bergeron, E. | |
| dc.contributor.author | Sfigakis, F. | |
| dc.contributor.author | Baugh, J. | |
| dc.contributor.author | Wasilewski, Z. | |
| dc.date.accessioned | 2019-12-23 18:49:43 (GMT) | |
| dc.date.available | 2019-12-23 18:49:43 (GMT) | |
| dc.date.issued | 2019-05-01 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jcrysgro.2019.02.039 | |
| dc.identifier.uri | http://hdl.handle.net/10012/15380 | |
| dc.description | The final publication is available at Elsevier via https://doi.org/10.1016/j.jcrysgro.2019.02.039. © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | en |
| dc.description.abstract | Comprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (0 0 1) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [ 1 0] direction was found to be around 0.5–0.6 with our growth conditions. On 2-inch GaAs (0 0 1) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs. | en |
| dc.description.sponsorship | The authors acknowledge the support from the Natural Sciences and Engineering Research Council (NSERC) of Canada, the Waterloo Institute of Nanotechnology (WIN) and the Institute of Quantum Computing (IQC). | en |
| dc.language.iso | en | en |
| dc.publisher | Elsevier | en |
| dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
| dc.subject | surface morphology | en |
| dc.subject | substrate offcut | en |
| dc.subject | spiral growth | en |
| dc.subject | InSb QW | en |
| dc.subject | metamorphic buffer | en |
| dc.title | Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE | en |
| dc.type | Article | en |
| dcterms.bibliographicCitation | Y. Shi, E. Bergeron, F. Sfigakis, J. Baugh, Z.R. Wasilewski, Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE, Journal of Crystal Growth (2019), doi: https://doi.org/10.1016/j.jcrysgro.2019.02.039 | en |
| uws.contributor.affiliation1 | Faculty of Engineering | en |
| uws.contributor.affiliation1 | Faculty of Science | en |
| uws.contributor.affiliation2 | Chemistry | en |
| uws.contributor.affiliation2 | Electrical and Computer Engineering | en |
| uws.contributor.affiliation2 | Institute of Quantum Computing (IQR) | en |
| uws.contributor.affiliation2 | Physics and Astronomy | en |
| uws.contributor.affiliation2 | Waterloo Institute for Nanotechnology (WIN) | en |
| uws.typeOfResource | Text | en |
| uws.peerReviewStatus | Reviewed | en |
| uws.scholarLevel | Faculty | en |
| uws.scholarLevel | Graduate | en |
Files in this item
This item appears in the following Collection(s)
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 International