Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE
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Comprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (0 0 1) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [ 1 0] direction was found to be around 0.5–0.6 with our growth conditions. On 2-inch GaAs (0 0 1) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs.
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Y. Shi, E. Bergeron, F. Sfigakis, J. Baugh, Z. Wasilewski (2019). Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE. UWSpace. http://hdl.handle.net/10012/15380
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