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dc.contributor.authorHoye, Robert L. Z.
dc.contributor.authorMusselman, Kevin P.
dc.contributor.authorMacManus-Driscoll, Judith L.
dc.date.accessioned2018-05-08 17:35:36 (GMT)
dc.date.available2018-05-08 17:35:36 (GMT)
dc.date.issued2013-12-01
dc.identifier.urihttp://dx.doi.org/10.1063/1.4833475
dc.identifier.urihttp://hdl.handle.net/10012/13255
dc.description© Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.en
dc.description.abstractZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.en
dc.description.sponsorshipRutherford Foundation of New Zealanden
dc.description.sponsorshipCambridge Commonwealth Trusten
dc.description.sponsorshipGirton College Cambridgeen
dc.description.sponsorshipERC Advanced Investigator Granten
dc.description.sponsorshipNovox [ERC-2009-adG247276]en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsAttribution 3.0 Unported*
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/*
dc.subjectAtomic-Layer Depositionen
dc.subjectOpen-Circuit Voltageen
dc.subjectOxide Buffer Layeren
dc.subjectEnhanced Photovoltaic Performanceen
dc.subjectTransparent Conducting Oxidesen
dc.subjectDoped Tio2en
dc.subjectZinc-Oxideen
dc.subjectThin-Filmsen
dc.subjectMetal-Oxideen
dc.subjectElectrodesen
dc.titleResearch Update: Doping ZnO and TiO2 for solar cellsen
dc.typeArticleen
dcterms.bibliographicCitationHoye, R. L. Z., Musselman, K. P., & MacManus-Driscoll, J. L. (2013). Research Update: Doping ZnO and TiO 2 for solar cells. APL Materials, 1(6), 060701. https://doi.org/10.1063/1.4833475en
uws.contributor.affiliation1Facuty of Engineeringen
uws.contributor.affiliation2Mechanical and Mechatronics Engineeringen
uws.typeOfResourceTexten
uws.peerReviewStatusRevieweden
uws.scholarLevelFacultyen


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