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Research Update: Doping ZnO and TiO2 for solar cells

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1.4833475.pdf (787.05 KB)

Date

2013-12-01

Authors

Hoye, Robert L. Z.
Musselman, Kevin P.
MacManus-Driscoll, Judith L.

Journal Title

Journal ISSN

Volume Title

Publisher

AIP Publishing

Abstract

ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

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© Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.

Keywords

Atomic-Layer Deposition, Open-Circuit Voltage, Oxide Buffer Layer, Enhanced Photovoltaic Performance, Transparent Conducting Oxides, Doped Tio2, Zinc-Oxide, Thin-Films, Metal-Oxide, Electrodes

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Citation

URI

http://dx.doi.org/10.1063/1.4833475
 http://hdl.handle.net/10012/13255

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Waterloo Research
Mechanical and Mechatronics Engineering