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Assessment of Germanane Field-Effect Transistors for CMOS Technology

dc.contributor.authorZhao, Yiju
dc.contributor.authorAlmutairi, Abdulaziz
dc.contributor.authorYoon, Youngki
dc.date.accessioned2018-08-27T13:30:18Z
dc.date.available2018-08-27T13:30:18Z
dc.date.issued2017-10-13
dc.description© 2017. IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.description.abstractUsing self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state characteristics, n-type GeH FET shows ~40% larger on current than the p-type counterpart, resulting in faster switching speed and lower power-delay product. Our benchmark of GeH FETs against similar devices based on 2D materials reveals that GeH outperforms MoS2 and black phosphorus in terms of energy-delay product (EDP). In addition, the performance of GeH-based CMOS circuit is analyzed using an inverter chain. By engineering power supply voltage and threshold voltage simultaneously, we find the optimal operating condition of GeH FETs, minimizing EDP in the CMOS circuit. Our comprehensive study including material parameterization, device simulation, and circuit analyses demonstrates significant potential of GeH FETs for 2D-material CMOS circuit applications.en
dc.description.sponsorshipNSERC Discovery NSERC Strategic Project WIN Nanofellowshipen
dc.identifier.urihttps://doi.org/10.1109/LED.2017.2763120
dc.identifier.urihttp://hdl.handle.net/10012/13665
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subject2D-material CMOS circuit applicationsen
dc.subjectblack phosphorusen
dc.subjectCMOS circuiten
dc.subjectCMOS integrated circuitsen
dc.subjectCMOS technologyen
dc.subjectdevice simulationen
dc.subjectelemental semiconductorsen
dc.subjectenergy-delay producten
dc.subjectfield effect transistorsen
dc.subjectGeH-based CMOS circuiten
dc.subjectGermananeen
dc.subjectgermanium compoundsen
dc.subjectIntegrated circuit modelingen
dc.subjectinverter chainen
dc.subjectinverter chainen
dc.subjectlower power-delay producten
dc.subjectmaterial parameterizationen
dc.subjectmolybdenum compoundsen
dc.subjectMOS devicesen
dc.subjectMoS2en
dc.subjectn-type GeH FETen
dc.subjectn-type germanane field-effect transistorsen
dc.subjectoff-state characteristicsen
dc.subjectp-type germanane field-effect transistorsen
dc.subjectPerformance evaluationen
dc.subjectpower supply voltageen
dc.subjectpower-delay producten
dc.subjectquantum transporten
dc.subjectself-consistent atomistic quantum transport simulationsen
dc.subjectSemiconductor device modelingen
dc.subjectSemiconductor device modelingen
dc.subjectSwitchesen
dc.subjectthreshold voltageen
dc.titleAssessment of Germanane Field-Effect Transistors for CMOS Technologyen
dc.typeArticleen
dcterms.bibliographicCitationZhao, Y., AlMutairi, A., & Yoon, Y. (2017). Assessment of Germanane Field-Effect Transistors for CMOS Technology. IEEE Electron Device Letters, 38(12), 1743–1746. https://doi.org/10.1109/LED.2017.2763120en
uws.contributor.affiliation1Faculty of Engineeringen
uws.contributor.affiliation2Electrical and Computer Engineeringen
uws.peerReviewStatusRevieweden
uws.scholarLevelFacultyen
uws.typeOfResourceTexten

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