Block Copolymer Self-assembly and Graphene Dry Etching

Abstract

This thesis focuses on interpreting the use of block copolymer self-assembly in nanolithography. Block copolymers are attractive materials for nanofabrication due to their ability to phase separate into ordered and chemically distinct domains of 10s nm size. In order to utilize the self-assembled structure in lithography applications like pattern transfer, the structure has to be perpendicular to the substrate. This thesis presents an effective way to deliver a perpendicular self-assembled PS-b-PMMA using 3-MPTS to neutralize the surface. This method depends on vapor deposition of 3-MPTS at room temperature for two hours prior to deposition of PS-b-PMMA. This thesis also presents an easy and effective way to control the number of graphene layers based on RIE process using oxygen plasma. The etching process was preformed on multi and single layer graphene prepared by (CVD). Raman spectrometer was used to characterize the samples before and after RIE process. The number of layers was identified form Raman spectrum by calculating the ratio I2D/IG, and the results show that bi-layer and single layer were achieved from multi-layer graphene, and the graphene was etched when using RIE process on a single-layer graphene. The RIE process was successfully used to pattern-transfer on a graphene-oxide film. This presents an effective solution to pattern and etch graphene for different applications.