Browsing Electrical and Computer Engineering by Subject "quantum transport"
Now showing items 1-3 of 3
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Assessment of Germanane Field-Effect Transistors for CMOS Technology
(Institute of Electrical and Electronics Engineers, 2017-10-13)Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state ... -
Modeling and Simulations of Molybdenum Diselenide (MoSe₂) Phototransistors
(University of Waterloo, 2020-01-10)Since the first demonstration of graphene, two-dimensional (2D) materials have attracted gigantic attentions from the electronic device community. Various 2D materials showing metallic, semiconducting, and insulating ... -
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices
(Institute of Electrical and Electronics Engineers, 2017-11-15)PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest ...