Assessment of Germanane Field-Effect Transistors for CMOS Technology
MetadataShow full item record
Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state characteristics, n-type GeH FET shows ~40% larger on current than the p-type counterpart, resulting in faster switching speed and lower power-delay product. Our benchmark of GeH FETs against similar devices based on 2D materials reveals that GeH outperforms MoS2 and black phosphorus in terms of energy-delay product (EDP). In addition, the performance of GeH-based CMOS circuit is analyzed using an inverter chain. By engineering power supply voltage and threshold voltage simultaneously, we find the optimal operating condition of GeH FETs, minimizing EDP in the CMOS circuit. Our comprehensive study including material parameterization, device simulation, and circuit analyses demonstrates significant potential of GeH FETs for 2D-material CMOS circuit applications.
Cite this version of the work
Yiju Zhao, Abdulaziz Almutairi, Youngki Yoon (2017). Assessment of Germanane Field-Effect Transistors for CMOS Technology. UWSpace. http://hdl.handle.net/10012/13665
Showing items related by title, author, creator and subject.
Monolithically Integrated Phase Change Material GeTe-Based RF Components for Millimeter Wave Applications Singh, Tejinder (University of Waterloo, 2020-05-22)RF switches are the fundamental building blocks for realizing reconfigurable front-ends in communication devices. Currently available RF switches are dominated by semiconductor technology which, while performing adequately ...
Anand, Abhishek (University of Waterloo, 2022-09-26)Low-depth quantum circuits are a well-suited model for near-term quantum devices, given short coherence times and noisy gate operations, making it pivotal to examine their computational power. It was already known as early ...
Nummer, Muhammad (University of Waterloo, 2007-06-15)With the rapid advances in process technologies, the performance of state-of-the-art integrated circuits is improving steadily. The drive for higher performance is accompanied with increased emphasis on meeting timing ...