Assessment of Germanane Field-Effect Transistors for CMOS Technology
MetadataShow full item record
Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state characteristics, n-type GeH FET shows ~40% larger on current than the p-type counterpart, resulting in faster switching speed and lower power-delay product. Our benchmark of GeH FETs against similar devices based on 2D materials reveals that GeH outperforms MoS2 and black phosphorus in terms of energy-delay product (EDP). In addition, the performance of GeH-based CMOS circuit is analyzed using an inverter chain. By engineering power supply voltage and threshold voltage simultaneously, we find the optimal operating condition of GeH FETs, minimizing EDP in the CMOS circuit. Our comprehensive study including material parameterization, device simulation, and circuit analyses demonstrates significant potential of GeH FETs for 2D-material CMOS circuit applications.
Cite this version of the work
Yiju Zhao, Abdulaziz Almutairi, Youngki Yoon (2017). Assessment of Germanane Field-Effect Transistors for CMOS Technology. UWSpace. http://hdl.handle.net/10012/13665
Showing items related by title, author, creator and subject.
Design of Variation-Tolerant Circuits for Nanometer CMOS Technology: Circuits and Architecture Co-Design Abu-Rahma, Mohamed Hassan (University of Waterloo, 2008-11-28)Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing ...
Sarbishaei, Hossein (University of Waterloo, 2007-05-10)ESD, the discharge of electrostatically generated charges into an IC, is one of the most important reliability problems for ultra-scaled devices. This electrostatic charge can generate voltages of up to tens of kilovolts. ...
Efficient Analysis for Nonlinear Effects and Power Handling Capability in High Power HTSC Thin Film Microwave Circuits Tang, Hongzhen (University of Waterloo, 2000)In this study two nonlinear analysis methods are proposed for investigation of nonlinear effects of high temperature superconductive(HTSC) thin film planar microwave circuits. The MoM-HB combination method is based on ...