Browsing Engineering (Faculty of) by Subject "MoS2"
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Assessment of Germanane Field-Effect Transistors for CMOS Technology
(Institute of Electrical and Electronics Engineers, 2017-10-13)Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state ... -
Effect of Layer Transfer and Plasma Etching on The Behavior of Transition-Metal Dichalcogenide Field-Effect Transistor Arrays
(University of Waterloo, 2023-05-30)The application of two-dimensional (2D) layered transition metal dichalcogenide (TMDC) for high-performance large-area memory applications requires establishing long-term electrical stability through an understanding of ... -
Molybdenum Disulphide (MoS2) Nanosheet Inks Evaluated for Printed Electronics and Application to Thin-Film Transistors
(University of Waterloo, 2017-06-20)Inkjet printing is a versatile deposition technique that has been used for the fabrication of electronic circuits, from simple conductive tracks to complete 3D logic circuits. The emergence of solution-processable 2D layered ...