Browsing Engineering (Faculty of) by Subject "GaN"
Now showing items 1-4 of 4
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Current Contour Based Design Methodology for IMN Design of Doherty Power Amplifiers
(University of Waterloo, 2015-09-16)Carrier aggregation (CA) is used in modern communication schemes to increase com- munication bandwidth (BW) and reduce redundant equipment. This combined with the already high peak to average power ratio (PAPR) signals in ... -
A Doherty Power Amplifier with Extended Bandwidth and Reconfigurable Back-off Level
(University of Waterloo, 2013-03-22)Emerging wireless standards are designed to be spectrally efficient to address the high cost of licensing wireless spectra. Unfortunately, the resulting signals have a high peak-to-average ratio that reduces the base station ... -
Extended Bandwidth Doherty Power Amplifier for Carrier Aggregated Signals
(University of Waterloo, 2014-08-21)In the conventional classes of power amplifiers the efficiency drops at power back-off, whereas in order to maximize the spectral efficiency and data rate, wireless communication standards employ signals with high peak to ... -
Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors
(University of Waterloo, 2017-04-19)Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) outperform Gallium Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to ...