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dc.contributor.authorZhu, Leien 14:01:05 (GMT) 14:01:05 (GMT)
dc.description.abstractThe hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used as switching elements in LCD displays and large area matrix addressed senor arrays. In recent years, a-Si:H TFTs have been used as analog active components in OLED displays. However, a-Si:H TFTs exhibit a bias induced metastability. This problem causes both threshold voltage and subthreshold slope to shift with time when a gate bias is applied. These instabilities jeopardize the long-term performance of a-Si:H TFT circuits. Nevertheless a-Si:H TFTs show an exponential transfer characteristic in the subthreshold region. Moreover, the typical power consumptions for TFTs in the subthreshold region are in the order of nano-watts, thus making them suitable for low power design. For these reasons, a-Si:H TFT I-V characteristics in the forward subthreshold operation are investigated. First, we have derived the static and dynamic models of a-Si:H TFT in the forward subthreshold region. Second, we have verified our theoretical models with experimental results. Third, we have proven that a-Si:H TFT experiences no subthreshold slope degradation or threshold voltage shift in the forward subthreshold operation. Finally, we have studied a-Si:H TFT current mirror circuit applications. Measurements regarding the fidelity of current matching in the forward subthreshold region have been performed, and results are shown.en
dc.format.extent664632 bytes
dc.publisherUniversity of Waterlooen
dc.rightsCopyright: 2005, Zhu, Lei. All rights reserved.en
dc.subjectElectrical & Computer Engineeringen
dc.subjectthin-film transistoren
dc.subjectdevice modelingen
dc.subjectsubthreshold operationen
dc.titleModeling of a-Si:H TFT I-V Characteristics in the Forward Subthreshold Operationen
dc.typeMaster Thesisen
dc.pendingfalseen and Computer Engineeringen
uws-etd.degreeMaster of Applied Scienceen

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