The Electronic Device with Resistance Switching Behavior based on Different Mechanisms
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Date
2023-09-14
Authors
Zhang, Baizhou
Journal Title
Journal ISSN
Volume Title
Publisher
University of Waterloo
Abstract
Due to the limitations of materials and structures, the performance of the von Neumann structure of traditional computers cannot meet the needs of today's people. The development of new electronic devices is the most effective way to improve the performance of computers. Devices with resistive switching behavior can realize simultaneous operating data storage and processing, which greatly saves the space required for device integration and reduces energy consumption at the same time. These advantages provide it with huge potential in advanced technology fields such as machine learning and neuromorphic computing. However, there are still challenges such as stability, miniaturization and working environment before this device realized its business purpose. In this thesis, memristor with rectifying effect is fabricated successfully, and its possible applications of neuromorphic computing and logic operations are discussed. In addition, two different methods were used to prepare phase-change materials, which are expected to be fabricated into phase-change memories.
Description
Keywords
Switching behavior, memristor, phase change, zinc oxide, antimony tellurim