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dc.contributor.authorJiashi, Shen
dc.date.accessioned2018-09-28 17:43:35 (GMT)
dc.date.available2018-09-28 17:43:35 (GMT)
dc.date.issued2018-09-28
dc.date.submitted2018-09-24
dc.identifier.urihttp://hdl.handle.net/10012/13962
dc.description.abstractAs the industry of nanofabrication developing, high-resolution e-beam lithography (EBL) becomes more and more important. In this thesis, it is discussed that the effective factors behind the resolution of EBL and how it works, trying to understand the capabilities and limits of different EBL resists and process to achieve high-resolution patterning. Practically, a new type of EBL resist and its lithography performance are reported. It is a solid state of HSQ. Comparing with traditional DOW-HSQ, it has a longer shelf life and even better contrast. What's more, a resolution boosting method involving two steps of exposure is also reported, which can be applied to fabricate the nanogap in-between block structures (electrodes).en
dc.language.isoenen
dc.publisherUniversity of Waterlooen
dc.subjectElectron Beam Lithographyen
dc.subjectHSQen
dc.subjectNano-gapen
dc.titleE-beam Lithography using Dry Powder HSQ Resist Having Long Shelf Life and Nanogap Electrode Fabricationen
dc.typeMaster Thesisen
dc.pendingfalse
uws-etd.degree.departmentElectrical and Computer Engineeringen
uws-etd.degree.disciplineElectrical and Computer Engineering (Nanotechnology)en
uws-etd.degree.grantorUniversity of Waterlooen
uws-etd.degreeMaster of Applied Scienceen
uws.contributor.advisorBo, Cui
uws.contributor.affiliation1Faculty of Engineeringen
uws.published.cityWaterlooen
uws.published.countryCanadaen
uws.published.provinceOntarioen
uws.typeOfResourceTexten
uws.peerReviewStatusUnrevieweden
uws.scholarLevelGraduateen


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