PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

Abstract

PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest neighbor tight-binding approximation. Interestingly, despite its small effective mass (me* as low as 0.21m0; m0 being electron rest mass), PtSe2 has large density of states (DOS) due to its unique six-valley conduction band within the first Brillouin zone, unlike MoX2 family. This has direct impacts on the device characteristics of PtSe2 field-effect transistors, resulting in superior on-state performance (30% higher on current and transconductance) as compared to the MoSe2 counterpart. Our simulation shows that PtSe2 device with a channel longer than 15 nm exhibits near-ideal subthreshold swing, and sub-100 mV/V of drain-induced barrier lowering can be achieved with an aggressively scaled gate oxide, demonstrating new opportunities for electronic devices with novel PtSe2.