Simulations of semiconductor laser using non-equilibrium Green's functions method

Abstract

A novel method of simulating edge-emitting semiconductor lasers in a non-equilibrium steady-state is developed. The simulation is based on a non-equilibrium Green's function (NEGF) method. The Dyson equation (central equation of this method) is derived and written in a basis suitable for numerical implementation. The electron-photon self-energy is derived form scratch for the case of the edge-emitting laser. Other interactions present in the simulation are phenomenological scattering and scattering due to longitudinal optical phonons. This microscopic approach significantly reduce the number of phenomenological parameters needed to simulate laser. As an example, the theory is applied to analyze quantum well laser with the effective mass Hamiltonian. The major laser characteristics such as modal gain, threshold gain, carrier and current densities are determined.