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Inverse Design and Lithographic Pattern Transfer of a Thin Near-Infrared All-Silicon Absorber

dc.contributor.authorRoy, Lucas
dc.date.accessioned2026-07-09T19:52:14Z
dc.date.available2026-07-09T19:52:14Z
dc.date.issued2026-07-09
dc.date.submitted2026-06-12
dc.description.abstractAll-silicon photodetectors are seldom used for Near-Infrared (NIR) Light Detection and Ranging (LiDAR) due to the low absorption coefficient of silicon in the NIR wavelength range. The absorptance of the absorption region is typically increased by increasing the depth of the absorption region, however, this approach adds timing jitter to a photode- tector that can severely limit the ranging resolution of the LiDAR system. This work maximized the absorptance of a silicon absorber in a fixed-depth 2.475 μm absorption re- gion from a theoretical baseline value of 2.58% to a simulated value of 8.33% for 950 nm wavelength incident light, a more than 3-fold improvement. The simulated absorptance enhancement compared to the baseline value was 3.2, whereas perfect black silicon only displays an absorptance enhancement of less than 1.5 at the 950 nm wavelength, giving the structure designed and simulated in this work a more than 2-fold absorptance enhancement improvement over perfect black silicon. This work applied topological optimization and inverse design methodologies to gen- erate the unique all-silicon 2 μm by 2 μm meta-atom absorber with vertical sidewalls. A pattern transfer using electron-beam lithography on a planar silicon sample with 340 nm of ZEP520A resist was conducted as a proof of concept that the pattern can be transferred faithfully into a real silicon sample. At the time that this work was conducted, the author was unaware of any such studies that applied topological optimization to maximize the absorptance of a thin all-silicon NIR absorber. This work showed that topological opti- mization can be effectively utilized to automatically design photonic devices where classical device architectures and structures designed by humans have poor performance. This work also proposes an initialization procedure for generating initial parameters for the optimization procedure. The structure optimized in this work was seeded using the initialization procedure showcasing its validity and effectiveness.
dc.identifier.urihttps://hdl.handle.net/10012/23721
dc.language.isoen
dc.pendingfalse
dc.publisherUniversity of Waterlooen
dc.subjectfinite-difference time-domain
dc.subjectFDTD
dc.subjectsimulation
dc.subjectabsorber
dc.subjectLiDAR
dc.subjectinverse design
dc.subjectadjoint optimization
dc.subjectlithography
dc.subjecttopology optimization
dc.subjectsilicon
dc.subjectmetamaterial
dc.subjectmetasurface
dc.subjectfabrication-aware design
dc.titleInverse Design and Lithographic Pattern Transfer of a Thin Near-Infrared All-Silicon Absorber
dc.typeMaster Thesis
uws-etd.degreeMaster of Applied Science
uws-etd.degree.departmentElectrical and Computer Engineering
uws-etd.degree.disciplineElectrical and Computer Engineering (Quantum Information)
uws-etd.degree.grantorUniversity of Waterlooen
uws-etd.embargo.terms0
uws.comment.hiddenI currently include the code I wrote in appendix A. I am aware the UWSpace policy is to deposit code and datasets separately and link to them, but was not sure if this was applicable if I authored the code and was completely self-contained. If a revision needs to be made about depositing my code and other configuration files, please follow up in an email (la3roy@uwaterloo.ca).
uws.contributor.advisorReimer, Michael
uws.contributor.advisorVosoogh-Grayli, Sasan
uws.contributor.affiliation1Faculty of Engineering
uws.peerReviewStatusUnrevieweden
uws.published.cityWaterlooen
uws.published.countryCanadaen
uws.published.provinceOntarioen
uws.scholarLevelGraduateen
uws.typeOfResourceTexten

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