Monolithic Integration of GeTe Switches and BST Varactors for Reconfigurable Millimeter-Wave Devices

dc.contributor.authorGolcheshmeh, Mehran
dc.date.accessioned2026-05-12T17:26:53Z
dc.date.available2026-05-12T17:26:53Z
dc.date.issued2026-05-12
dc.date.submitted2026-05-11
dc.description.abstractReconfigurable microwave and millimeter-wave systems require tunable components that provide low loss, high resolution, and compact implementation. Conventional approaches based on semiconductor devices, microelectromechanical systems (MEMS), and purely analog or digital tuning techniques face limitations in loss, tuning range, resolution, and integration complexity. Therefore, alternative approaches are needed that can overcome these challenges while remaining compatible with integrated fabrication processes. This thesis presents the development of tunable RF components based on the monolithic integration of ferroelectric barium strontium titanate (BST) varactors and phase-change material (PCM) germanium telluride (GeTe) switches. BST varactors provide continuous analog tuning with low power consumption, while GeTe switches enable discrete, nonvolatile reconfiguration. The combination of these technologies enables a hybrid analog–digital tuning approach that improves tuning range and flexibility. The work begins with the development and optimization of fabrication process for BST thin-film varactors, followed by their application in tunable circuits. A monolithic fabrication process is then developed to integrate BST varactors and GeTe switches. The challenges associated with material compatibility and process conditions are addressed, and both BST and GeTe devices are fabricated and characterized. Using this platform, hybrid analog–digital varactors with enhanced tuning range are demonstrated. Finally, the hybrid tuning approach is applied to the design and implementation of phase shifters, including true-time-delay (TTD) and reflective-type architectures. These designs combine the advantages of analog and digital tuning to achieve improved phase control, compact implementation, and reduced loss compared to conventional approaches. The results presented in this thesis demonstrate the effectiveness of combining BST varactors and GeTe switches for the realization of reconfigurable millimeter-wave components, providing a practical approach for next-generation tunable RF systems.
dc.identifier.urihttps://hdl.handle.net/10012/23290
dc.language.isoen
dc.pendingfalse
dc.publisherUniversity of Waterlooen
dc.subjectmicrowave engineering
dc.subjectmonolithic fabrication process
dc.subjectGeTe PCM switch
dc.subjectBST varactor
dc.subjectmillimeter-wave devices
dc.subjectreconfigurable circuits
dc.subjectphase shifters
dc.titleMonolithic Integration of GeTe Switches and BST Varactors for Reconfigurable Millimeter-Wave Devices
dc.typeDoctoral Thesis
uws-etd.degreeDoctor of Philosophy
uws-etd.degree.departmentElectrical and Computer Engineering
uws-etd.degree.disciplineElectrical and Computer Engineering
uws-etd.degree.grantorUniversity of Waterlooen
uws-etd.embargo.terms0
uws.contributor.advisorMansour, Raafat
uws.contributor.affiliation1Faculty of Engineering
uws.peerReviewStatusUnrevieweden
uws.published.cityWaterlooen
uws.published.countryCanadaen
uws.published.provinceOntarioen
uws.scholarLevelGraduateen
uws.typeOfResourceTexten

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