Investigations of InAsP/InP Semiconductor Devices for Quantum Communication Technologies
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This thesis presents a set of magnetotransport experiments which explore the advantages of InAsP/InP quantum well material and quantum dot structures for spin/photon devices, with a view towards quantum communication. The primary motivation is the development of a solid state quantum repeater, which will enable a secure worldwide quantum internet. Sections 1-6 review theoretical background relevant to an understanding of the experiments and the hybrid spin-photon devices which may enable the realization of scalable quantum communication over global distances. They provide simple introductory reviews of quantum dot and spin qubit physics, as well as specialized techniques such as Bell measurement and g-factor engineering, highlighting what is relevant to motivating and understanding the experiments described in later sections. The necessary properties of a hybrid spin/photon device are discussed. Section 7 predicts the effectiveness of several techniques for the engineering of g-factors for the spin-qubit part of these devices. Section 8 presents the novel device structure which was developed and evaluated as a platform for supporting scalable and optically active spin qubit arrays. The required properties of a hybrid device can be met, in theory. Sections 9-13 present the experiments which were performed to evaluate the InAsP material system for quantum dot applications, the nanowire ridge devices described in section 8, and the side-effects of magnetic fields typically applied to a 2DEG as part of any spin qubit experiment. Magnetic fields are found to noticeably influence scattering effects in a high mobility 2DEG, even at modest fields. The formation of quantum dots in both InGaAs and InAsP nanowires is observed.