High-Performance Polymer Semiconductors for Organic Thin-Film Transistors
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A novel polymer semiconductor with side chains thermally cleavable at a low temperature of 200 °C was synthesized. The complete cleavage and removal of the insulating 2-octyldodecanoyl side chains were verified with TGA, FT-IR, and NMR data. The N-H groups on the native polymer backbone are expected to form intermolecular hydrogen bonds with the C=O groups on the neighboring polymer chains to establish 3-D charge transport networks. The resulting side chain-free conjugated polymer is proven to be an active p-type semiconductor material for organic thin film transistors (OTFTs), exhibiting hole mobility of up to 0.078 cm2V-1s-1. This thermo-cleavable polymer was blended with PDQT to form films that showed a higher performance than the pure individual polymers in OTFTs. MoO3 or NPB was used as a hole injection buffer layer between the metal electrodes and the polymer semiconductor film layer in OTFT devices. This buffer layer improved hole injection, while its use in the OTFT, improved the field-effect mobility significantly due to better matched energy levels between the electrodes and the polymer semiconductor.
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Bin Sun (2012). High-Performance Polymer Semiconductors for Organic Thin-Film Transistors. UWSpace. http://hdl.handle.net/10012/6960