| dc.description.abstract | The relentless pursuit of miniaturization in semiconductor technology has ushered in the era of nanotransistors, which operate at the cutting edge of physical limits. This thesis presents significant advancements in nanoelectronics, focusing on the development of a numerical simulation tool for two-dimensional (2D) material-based Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) operating at cryogenic temperatures and exploring the potentials of materials like germanene (GeH) and hafnium disulfide
(HfS2) for future Complementary Metal-Oxide-Semiconductor (CMOS) technology. Central to this work is an advanced simulation framework capable of accurately predicting and characterizing 2D-based MOSFET behavior under cryogenic conditions, pivotal for cutting-edge applications such as control circuits for quantum computing. Furthermore, my research during PhD involves a comprehensive multi-level simulation approach, addressing substantial challenges in cryogenic device operation and laying a foundational framework for the design and optimization of electronic devices in extreme temperature environments while also advancing the understanding of material-device-circuit interplay for the efficient design of next-generation nanoelectronic circuits.
The simulation framework in the thesis utilizes the non-equilibrium Green’s function (NEGF) formalism, incorporating temperature-dependent electrostatics, scattering, dissipation effects, carrier freeze-out, and band tail phenomena. This methodology provides
a detailed understanding of the physical processes governing 2D materials in cryogenic environments. Through a rigorous alignment with experimental data, particularly with HfS2 MOSFETs, the framework validates our model and underscores its potential to enhance cryogenic electronic device performance. This significant achievement marks a stride in using 2D materials for quantum computing applications, offering a sophisticated tool for their design and optimization. In addition, the thesis explores a holistic multi-level simulation approach tailored for 2D material-based nanoelectronics, featuring an in-depth case study on GeH MOSFETs. This segment covers device simulation, physics-based compact modeling, and circuit benchmarking, seamlessly bridging the gap between nanomaterial properties and circuit behavior. By revising the virtual source model to reflect the unique characteristics of 2D-material FETs and conducting HSPICE simulations, we have demonstrated substantial improvements in the energy-delay product by optimizing power supply and threshold voltages. This multi-faceted simulation process deepens the understanding of the synergy between materials, devices, and circuits and paves the way for the efficient design of futuristic nanoelectronic circuits.
Overall, this thesis underscores the critical role of cryogenic simulations in leveraging the full potential of 2D materials for advanced electronic applications, setting the stage for a new era in cryo-CMOS and beyond. The insights from this research are expected to spark further investigations and developments, pushing the boundaries of what is achievable in nanoelectronics. | en |
