The Impact of Lithium Ion on the Application of Resistive Switching Devices

Abstract

With the development of the times, people have higher and higher requirements for storage equipment. Many new storage devices have emerged, such as Magnetoresistive random-access memory(MRAM) and Resistive random-access memory(ReRAM). The junction structure is the basic unit of these two storage devices, and in this paper, the MTJ and resistive switching junction are tuned with lithium fluoride(LiF) to optimize their performance, respectively. In the first experiment, a magnetic tunnelling junction resembling a battery is developed and proved to be electromagnetically tuneable. In this LiF-based device, reversible non-volatile resistive switching phenomena and tunnelling phenomena coexist, enabling four well-defined groups for each device. The management of the interface enables the spin transfer of actively controlled devices, hence enhancing their application potential. In the second experiment, 796 devices were measured. For the resistive switching device with TiO as the insulating layer, adding additional LiF layer can significantly increase the probability of resistive switching phenomenon, and adding an appropriate thickness of LiF can also increase the differentiation between high and low group states, which is beneficial for the regulation of resistive switching devices.