Few Hole Quantum Dots in a Gated GaAs/AlGaAs Heterostructure

dc.contributor.author	Bogan, Alexander
dc.date.accessioned	2019-06-24 18:18:19 (GMT)
dc.date.available	2019-06-24 18:18:19 (GMT)
dc.date.issued	2019-06-24
dc.date.submitted	2019-06-17
dc.identifier.uri	http://hdl.handle.net/10012/14773
dc.description.abstract	This thesis presents a set of experiments that explore gate de ned hole quantum dots in the GaAs/AlGaAs heterostructure. These experiments explore the evolution of the quantum states of holes in a double quantum dot. The focus is placed on the charge distribution and spin degrees of freedom, with a view toward developing quantum information technologies.	en
dc.language.iso	en	en
dc.publisher	University of Waterloo	en
dc.subject	physics	en
dc.subject	semiconductor	en
dc.subject	low-temperature	en
dc.subject	quantum information	en
dc.subject	qubits	en
dc.subject	holes	en
dc.subject	spin	en
dc.title	Few Hole Quantum Dots in a Gated GaAs/AlGaAs Heterostructure	en
dc.type	Doctoral Thesis	en
dc.pending	false
uws-etd.degree.department	Physics and Astronomy	en
uws-etd.degree.discipline	Physics	en
uws-etd.degree.grantor	University of Waterloo	en
uws-etd.degree	Doctor of Philosophy	en
uws.contributor.advisor	Studenikin, Sergei
uws.contributor.advisor	Kycia, Jan
uws.contributor.affiliation1	Faculty of Science	en
uws.published.city	Waterloo	en
uws.published.country	Canada	en
uws.published.province	Ontario	en
uws.typeOfResource	Text	en
uws.peerReviewStatus	Unreviewed	en
uws.scholarLevel	Graduate	en