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dc.contributor.authorAlMutairi, AbdulAziz
dc.contributor.authorZhao, Yiju
dc.contributor.authorYin, Demin
dc.contributor.authorYoon, Youngki 14:28:27 (GMT) 14:28:27 (GMT)
dc.description© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.description.abstractHere we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory (DFT) and then tight-binding parameters were extracted. Device characteristics of GeH FETs are investigated using rigorous self-consistent atomistic quantum transport simulations within tight-binding approximations. Our simulation results indicate that GeH FETs can exhibit exceptional on-state device characteristics such as high Ion (>2 mA/μm) and large gm (~7 mS/μm) with V<sub>DD</sub> = 0.5 V due to the very light effective mass of GeH (0.07m<sub>0</sub>), while maintaining excellent switching characteristics (SS ~64 mV/dec). We have also performed a scaling study by varying the channel length, and it turned out that GeH FET can be scaled down to ~14 nm channel without facing significant short channel effects but it may suffer from large leakage current at the channel length shorter than 10 nm. Finally, we have benchmarked GeH FET against MoS<sub>2</sub> counterpart, exhibiting better suitability of GeH device for high-performance applications compared to MoS<sub>2</sub> transistors.en
dc.description.sponsorshipNSERC Discovery Grant || RGPIN-05920-2014 NSERC Strategic Project Grant || STPGP 478974-15en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectField-Effect Transistoren
dc.subjectQuantum Transporten
dc.subjectNon-equilibrium Green's functionen
dc.subjectDevice Simulationen
dc.titlePerformance Limit Projection of Germanane Field-Effect Transistorsen
dcterms.bibliographicCitationAlMutairi, A., Zhao, Y., Yin, D., & Yoon, Y. (2017). Performance Limit Projection of Germanane Field-Effect Transistors. IEEE Electron Device Letters, 38(5), 673–676.
uws.contributor.affiliation1Faculty of Engineeringen
uws.contributor.affiliation2Electrical and Computer Engineeringen

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