Block co-polymer self-assembly

Abstract

Contemporary electronic industry heavily relies on its capability to fabricate electronic devices with small feature size. The race to fabricate higher number of electronic devices per area has faced critical miniaturization challenges. In order to meet the increasing demand of industry for fabrication of smaller electronic devices, new methods were being studied and developed to deal with challenges in fabrication of the very small. Nanotechnology and application of nanomaterials is one of the alternative avenues for fabrication of such miniature structures. For many decades, photolithography has been the core of semiconductor industry and device fabrication. However, to meet the industry requirements and deal with miniaturization challenges, variety of photolithography techniques coupled with nanotechnology has been studied and developed. One of such nanotechnology driven techniques that has significantly attracted researchers as well as the semiconductor industry stake holder’s attention is bottom-up method based on self-assembly of nanoparticles. Low processing cost, high resolution and large scale processing compatibility are among the prominent advantages of this method. This thesis mainly focuses on explaining the application of block copolymer (BCP) self-assembly in nanolithography, and their ability to phase separate into ordered and chemically distinct domains of 10s nm size. Moreover, this thesis presents an effective way to obtain a perpendicular self- assembled PS-b-PMMA with very high aspect ratio which is preferred for pattern transfer. To deliver this unique orientation, 3-MPTS is used to neutralize the surface. This method depends on vapor deposition of 3-MPTS at room temperature for two hours or less prior to deposition of PS- b-PMMA.