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dc.contributor.authorNorris, Ryan Christopher
dc.date.accessioned2011-09-28 19:31:57 (GMT)
dc.date.available2011-09-28 19:31:57 (GMT)
dc.date.issued2011-09-28T19:31:57Z
dc.date.submitted2011
dc.identifier.urihttp://hdl.handle.net/10012/6279
dc.description.abstractThe development and fabrication of silicon-based phononic band gap crystals has been gaining interest since phononic band gap crystals have implications in fundamental science and display the potential for application in engineering by providing a relatively new platform for the realization of sensors and signal processing elements. The seminal study of phononic band gap phenomenon for classical elastic wave localization in structures with periodicity in two- or three-physical dimensions occurred in the early 1990’s. Micro-integration of silicon devices that leverage this phenomenon followed from the mid-2000’s until the present. The reported micro-integration relies on exotic piezoelectric transduction, phononic band gap crystals that are etched into semi-infinite or finite-thickness slabs which support surface or slab waves, phononic band gap crystals of numerous lattice constants in dimension and phononic band gap crystal truncation by homogeneous mediums or piezoelectric transducers. The thesis reports, to the best of the author's knowledge, for the first time, the theory, design methodology and experiment of an electrostatically actuated silicon-plate phononic band gap quasi-crystal architecture, which may serve as a platform for the development of a new generation of silicon-integrated sensors, signal processing elements and improved mechanical systems. Electrostatic actuation mitigates the utilization of piezoelectric transducers and provides action at a distance type forces so that the phononic band gap quasi-crystal edges may be free standing for potentially reduced anchor and substrate mode loss and improved energy confinement compared with traditional surface and slab wave phononic band gap crystals. The proposed phononic band gap quasi-crystal architecture is physically scaled for fabrication as MEMS in a silicon-on-insulator process. Reasonable experimental verification of the model of the electrostatically actuated phononic band gap quasi-crystal architecture is obtained through extensive dynamic harmonic analysis and mode shape topography measurements utilizing optical non-destructive laser-Doppler velocimetry. We have utilized our devices to obtain fundamental information regarding novel transduction mechanisms and behavioral characteristics of the phononic band gap quasi-crystal architecture. Applicability of the phononic band gap quasi-crystal architecture to physical temperature sensors is demonstrated experimentally. Vibration stabilized resonators are demonstrated numerically.en
dc.language.isoenen
dc.publisherUniversity of Waterlooen
dc.subjectPhononic Band Gap Crystalsen
dc.subjectMicro Electro Mechanical Systemsen
dc.subjectMEMSen
dc.subjectCoupled mass resonatorsen
dc.titleSilicon-Integrated Two-Dimensional Phononic Band Gap Quasi-Crystal Architectureen
dc.typeDoctoral Thesisen
dc.pendingfalseen
dc.subject.programElectrical and Computer Engineeringen
uws-etd.degree.departmentElectrical and Computer Engineeringen
uws-etd.degreeDoctor of Philosophyen
uws.typeOfResourceTexten
uws.peerReviewStatusUnrevieweden
uws.scholarLevelGraduateen


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