Show simple item record

dc.contributor.authorZhao, Yiju 18:35:14 (GMT) 18:35:14 (GMT)
dc.description.abstractTwo-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) have been in the spotlight for next-generation complementary metal-oxide- semiconductor (CMOS) technology due to their outstanding electronic properties. Recently, germanane (GeH), a hydrogenated germanium monolayer has emerged as a new family of 2D semiconductors. High carrier mobility of GeH as well as promising potential for electronic devices were predicted earlier. However, previous studies were based on a semi-classical model, which cannot properly capture quantum mechanical phenomena generally observed in nanoscale devices. In addition, intrinsic device performance, such as intrinsic delay and switching energy, and circuit-level analyses of GeH field- effect transistors (FETs) are currently absent from the field, the understanding of which will be essential to make use of GeH for future electronic devices. Therefore, in this thesis, a comprehensive study, including material parameterization, device optimization and circuit analysis of GeH FETs will be discussed by means of rigorous self-consistent atomistic quantum transport simulations within a tight- binding approximation. This thesis covers the following topics: (1) introduction to multi-scale simulations including material parameterization, device simulation and circuit analysis, (2) investigation of transport characteristics and the scaling limit of n-type GeH metal-oxide-semiconductor (MOS) FETs, (3) assessment of GeH MOSFETs for CMOS technology with device optimization, (4) investigation of intrinsic performance of GeH Schottky-barrier (SB) FETs, and (5) discussion of possible future works, such as Ge-GeH heterostructure and multilayer GeH FETs to seek further opportunities. Our results suggest that GeH MOSFET exhibits excellent on-state performance as well as the superior circuit behaviors in terms of energy-delay product. It is also proven that GeH SBFET can be as promising as the MOSFET counterpart despite the performance degradation imposed by the metal-semiconductor junction. Our comprehensive study covering material, device and circuit simulation reveals the significant potential of germanane for the next-generation nanoelectronic devices.en
dc.publisherUniversity of Waterlooen
dc.titleAssessment of Germanane Field Effect Transistors: From Intrinsic Device to CMOS Circuit Performanceen
dc.typeMaster Thesisen
dc.pendingfalse and Computer Engineeringen and Computer Engineeringen of Waterlooen
uws-etd.degreeMaster of Applied Scienceen
uws.contributor.advisorYoon, Youngki
uws.contributor.affiliation1Faculty of Engineeringen

Files in this item


This item appears in the following Collection(s)

Show simple item record


University of Waterloo Library
200 University Avenue West
Waterloo, Ontario, Canada N2L 3G1
519 888 4883

All items in UWSpace are protected by copyright, with all rights reserved.

DSpace software

Service outages