Browsing University of Waterloo by Supervisor "Yoon, Youngki"
Now showing items 1-9 of 9
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Assessment of Germanane Field Effect Transistors: From Intrinsic Device to CMOS Circuit Performance
(University of Waterloo, 2018-08-02)Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) have been in the spotlight for next-generation complementary metal-oxide- semiconductor (CMOS) technology due ... -
Development of a Simulation Framework for 2D-Material MOSFETs: Investigating Cryogenic Behaviors and Enhancing Performance Optimization
(University of Waterloo, 2024-05-01)The relentless pursuit of miniaturization in semiconductor technology has ushered in the era of nanotransistors, which operate at the cutting edge of physical limits. This thesis presents significant advancements in ... -
Modeling and Simulations of Molybdenum Diselenide (MoSe₂) Phototransistors
(University of Waterloo, 2020-01-10)Since the first demonstration of graphene, two-dimensional (2D) materials have attracted gigantic attentions from the electronic device community. Various 2D materials showing metallic, semiconducting, and insulating ... -
A Novel Computational Framework for Negative Capacitance Devices: From Ferroelectric-based Capacitors to Negative Capacitance Field-Effect Transistors
(University of Waterloo, 2022-08-18)Negative capacitance (NC) devices generally manifest hysteresis originating from the ferroelectric materials (FE) with nonlinear hysteretic responses of spontaneous polarization (P) to the applied electric field, while ... -
Numerical and Statistical Performance Analysis of Multi-Gate Negative Capacitance Field-Effect Transistors
(University of Waterloo, 2022-12-20)With the continued scaling of field-effect transistors (FETs) we have past the point where short-channel effects (SCEs) become a dominate factor in device performance. In particular, FETs suffer from increased leakage ... -
Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors
(University of Waterloo, 2016-08-17)Recently, a novel two-dimensional (2D) semiconductor of few-layer black phosphorus (BP) or phosphorene has been explored extensively for future electronic device applications. BP field-effect transistors (FETs) exhibited ... -
PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications
(University of Waterloo, 2018-08-03)Recently, silicon-based complementary metal-oxide-semiconductor (CMOS) technology has been struggling in keeping the continuous improvement predicted by Moore’s Law. Hence, significant efforts have been made to find ... -
STT-MRAM characterization and its test implications
(University of Waterloo, 2020-04-24)Spin torque transfer (STT)-magnetoresistive random-access memory (MRAM) has come a long way in research to meet the speed and power consumption requirements for future memory applications. The state-of-the-art STT-MRAM ... -
Theoretical Investigation of Contact Effects on the Performance of 2D-Material Nanotransistors
(University of Waterloo, 2021-04-28)Two-dimensional (2D) materials have attracted significant attention for electronic device applications since the first graphene transistor was demonstrated in 2004. Various 2D materials not only exhibit excellent carrier ...