Browsing University of Waterloo by Supervisor "Yoon, Youngki"
Now showing items 1-6 of 6
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Assessment of Germanane Field Effect Transistors: From Intrinsic Device to CMOS Circuit Performance
(University of Waterloo, 2018-08-02)Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) have been in the spotlight for next-generation complementary metal-oxide- semiconductor (CMOS) technology due ... -
Modeling and Simulations of Molybdenum Diselenide (MoSe₂) Phototransistors
(University of Waterloo, 2020-01-10)Since the first demonstration of graphene, two-dimensional (2D) materials have attracted gigantic attentions from the electronic device community. Various 2D materials showing metallic, semiconducting, and insulating ... -
Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors
(University of Waterloo, 2016-08-17)Recently, a novel two-dimensional (2D) semiconductor of few-layer black phosphorus (BP) or phosphorene has been explored extensively for future electronic device applications. BP field-effect transistors (FETs) exhibited ... -
PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications
(University of Waterloo, 2018-08-03)Recently, silicon-based complementary metal-oxide-semiconductor (CMOS) technology has been struggling in keeping the continuous improvement predicted by Moore’s Law. Hence, significant efforts have been made to find ... -
STT-MRAM characterization and its test implications
(University of Waterloo, 2020-04-24)Spin torque transfer (STT)-magnetoresistive random-access memory (MRAM) has come a long way in research to meet the speed and power consumption requirements for future memory applications. The state-of-the-art STT-MRAM ... -
Theoretical Investigation of Contact Effects on the Performance of 2D-Material Nanotransistors
(University of Waterloo, 2021-04-28)Two-dimensional (2D) materials have attracted significant attention for electronic device applications since the first graphene transistor was demonstrated in 2004. Various 2D materials not only exhibit excellent carrier ...