AlMutairi, AbdulAzizYin, DeminYoon, Youngki2018-08-272018-08-272017-11-15https://doi.org/10.1109/LED.2017.2773599http://hdl.handle.net/10012/13666© 2017 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest neighbor tight-binding approximation. Interestingly, despite its small effective mass (me* as low as 0.21m0; m0 being electron rest mass), PtSe2 has large density of states (DOS) due to its unique six-valley conduction band within the first Brillouin zone, unlike MoX2 family. This has direct impacts on the device characteristics of PtSe2 field-effect transistors, resulting in superior on-state performance (30% higher on current and transconductance) as compared to the MoSe2 counterpart. Our simulation shows that PtSe2 device with a channel longer than 15 nm exhibits near-ideal subthreshold swing, and sub-100 mV/V of drain-induced barrier lowering can be achieved with an aggressively scaled gate oxide, demonstrating new opportunities for electronic devices with novel PtSe2.enPtSe₂quantum transportfield effect transistorsnon-equilibrium Green’s functionArticle