Shi, Y.Bergeron, E.Sfigakis, F.Baugh, J.Wasilewski, Z.2019-12-232019-12-232019-05-01https://doi.org/10.1016/j.jcrysgro.2019.02.039http://hdl.handle.net/10012/15380The final publication is available at Elsevier via https://doi.org/10.1016/j.jcrysgro.2019.02.039. © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/Comprehensive studies on the surface morphological evolution of AlInSb metamorphic buffers and InSb QWs grown on top were conducted as a function of the GaAs (0 0 1) substrate offcut angles. We confirmed our earlier postulation that the vicinal surfaces defined by the hillock facets have the exact surface orientation needed to achieve large-area hillock-free surfaces. The related morphological transitions were discussed with a graphic illustration. The optimum substrate offcut for InSb towards [ 1 0] direction was found to be around 0.5–0.6 with our growth conditions. On 2-inch GaAs (0 0 1) substrates with this offcut, a hillock-free and atomically smooth surface morphology was successfully achieved for modulation-doped InSb QWs.enAttribution-NonCommercial-NoDerivatives 4.0 Internationalsurface morphologysubstrate offcutspiral growthInSb QWmetamorphic bufferArticle