Alshehri, Abdullah H.Nelson-Fitzpatrick, NathanIbrahim, Khaled H.Mistry, KissanYavuz, MustafaMusselman, Kevin P.2018-05-082018-05-082018-03-21http://dx.doi.org/10.1116/1.5019170http://hdl.handle.net/10012/13249This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Alshehri, A. H., Nelson-Fitzpatrick, N., Ibrahim, K. H., Mistry, K., Yavuz, M., & Musselman, K. P. (2018). Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36(3), 031602 and may be found at https://doi.org/10.1116/1.5019170In this work, a plasma assisted atomic layer deposition system was used to deposit nitrogen-doped titanium dioxide. A simple approach was developed that requires only a nitrogen plasma and short plasma exposure times to effectively dope TiO2. A range of nitrogen concentrations were achieved by varying the flow rate and exposure times of nitrogen and oxygen plasmas. A nitrogen content as high as 23 ± 0.5 at. % was observed when only the nitrogen plasma was used. It was also possible to vary the type of nitrogen doping from almost entirely interstitial to purely substitutional, as measured by x-ray photoelectron spectroscopy. Ultraviolet-visible spectroscopy measurements showed a shifting in the absorption edge from 350 to 520 nm with doping, indicating bandgap narrowing from 3.1 to 1.9 eV.enSpectroscopyDopingOptical propertiesX-ray photoelectron spectroscopyOptical absorptionBand gapAtomic layer depositionArticle