Now showing items 1-4 of 4
PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications
(University of Waterloo, 2018-08-03)
Recently, silicon-based complementary metal-oxide-semiconductor (CMOS) technology has been struggling in keeping the continuous improvement predicted by Moore’s Law. Hence, significant efforts have been made to find ...
Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors
(Institute of Electrical and Electronics Engineers, 2017-05-18)
Recently gigahertz frequencies have been reported with black phosphorus (BP) field-effect transistors (FETs), yet the high-frequency performance limit has remained unexplored. Here we project the frequency limit of BP FETs ...
Performance Limit Projection of Germanane Field-Effect Transistors
(Institute of Electrical and Electronics Engineers, 2017-03-13)
Here we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory (DFT) and then tight-binding parameters ...
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices
(Institute of Electrical and Electronics Engineers, 2017-11-15)
PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest ...