Browsing Engineering (Faculty of) by Author "Yin, Demin"
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Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors
Yin, Demin; AlMutairi, AbdulAziz; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-05-18)Recently gigahertz frequencies have been reported with black phosphorus (BP) field-effect transistors (FETs), yet the high-frequency performance limit has remained unexplored. Here we project the frequency limit of BP FETs ... -
Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors
Yin, Demin (University of Waterloo, 2016-08-17)Recently, a novel two-dimensional (2D) semiconductor of few-layer black phosphorus (BP) or phosphorene has been explored extensively for future electronic device applications. BP field-effect transistors (FETs) exhibited ... -
Performance Limit Projection of Germanane Field-Effect Transistors
AlMutairi, AbdulAziz; Zhao, Yiju; Yin, Demin; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-03-13)Here we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory (DFT) and then tight-binding parameters ... -
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices
AlMutairi, AbdulAziz; Yin, Demin; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-11-15)PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest ... -
Theoretical Investigation of Contact Effects on the Performance of 2D-Material Nanotransistors
Yin, Demin (University of Waterloo, 2021-04-28)Two-dimensional (2D) materials have attracted significant attention for electronic device applications since the first graphene transistor was demonstrated in 2004. Various 2D materials not only exhibit excellent carrier ...