Now showing items 1-4 of 4

    • Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors 

      Yin, Demin; AlMutairi, AbdulAziz; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-05-18)
      Recently gigahertz frequencies have been reported with black phosphorus (BP) field-effect transistors (FETs), yet the high-frequency performance limit has remained unexplored. Here we project the frequency limit of BP FETs ...
    • Performance Limit Projection of Germanane Field-Effect Transistors 

      AlMutairi, AbdulAziz; Zhao, Yiju; Yin, Demin; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-03-13)
      Here we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory (DFT) and then tight-binding parameters ...
    • PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications 

      AlMutairi, AbdulAziz (University of Waterloo, 2018-08-03)
      Recently, silicon-based complementary metal-oxide-semiconductor (CMOS) technology has been struggling in keeping the continuous improvement predicted by Moore’s Law. Hence, significant efforts have been made to find ...
    • PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices 

      AlMutairi, AbdulAziz; Yin, Demin; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-11-15)
      PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest ...


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