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| Title: | Nano-Crystalline &Amorphous Silicon PhotoTransistor Performance Analysis |
| Authors: | Zhang, Yanfeng |
| Keywords: | nc-Si
phototransistor |
| Approved Date: | 24-Aug-2009 |
| Date Submitted: | 2009 |
| Abstract: | In this thesis, we compared electrical performance and stability of a novel nanocrystalline Si (nc-Si) thin film phototransistor (TFT) phototransistor and a regular amorphous silicon (a-Si:H) TFT phototransistor for large area imaging applications. The electrical performance parameters of nc-Si TFT phototransistor were extracted from the electrical (current-voltage) testing in dark and under illumination. The field-effect mobility is found to be around 1.2 cm2V-1s-1, the threshold voltage around 3.9V and the sub-threshold voltage slope around 0.47V/Dec. Optical properties of nc-Si TFT phototransistor have been evaluated under the green light illumination in the range of 1014 – 1017 lum, and the photocurrent gain and the external quantum efficiency were extracted from the experimental results. By comparing the results with those for a-Si:H TFTs measured under the same conditions, we found that nc-Si TFT has higher photo current gain under low illumination intensity, 5 ×1014 to 7 ×1015 lum. This thesis shows the relations bewteen the photo current gain, the external quantum efficiency, TFT drain and TFT gate bias; the photo current gain and the external quantum efficiency can be controlled by the Vds and the Vgs. |
| Program: | Electrical and Computer Engineering |
| Department: | Electrical and Computer Engineering |
| Degree: | Master of Applied Science |
| URI: | http://hdl.handle.net/10012/4586 |
| Appears in Collections: | Faculty of Engineering Theses and Dissertations
Electronic Theses and Dissertations (UW)
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